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| SPICE MODEL: DMN2005DLP4K DMN2005DLP4K DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * * Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) ESD Protected Gate Ultra Low Profile Package D1 G2 S2 Dim A B C DFN1310H4-6 Min 1.25 0.95 0.20 0 0.10 0.30 Max 1.38 1.08 0.30 0.40 0.05 0.20 0.50 Typ 1.30 1.00 0.25 0.10 0.20 0.20 0.15 0.40 0.35 0.25 0.05 S1 G1 D2 D* E** G H Top View G H Mechanical Data * * Case: DFN1310H4-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 4 Ordering & Date Code Information: See Page 4 * * * * * Side View Z 01 K* L* M** N* Z** K L E N C B All Dimensions in mm * Dimensions D, K, L, N Repeat 4X ** Dimensions E, M, Z Repeat 2X D D N A M Z Bottom View ESD protected Maximum Ratings Drain-Source Voltage @TA = 25C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RJA Tj, TSTG Value 20 10 200 250 350 357 -65 to +150 Unit V V mA mW C/W C Characteristic Gate-Source Voltage Drain Current per element (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 1. 2. 3. 4. Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30801 Rev. 6 - 2 1 of 4 www.diodes.com DMN2005DLP4K (c) Diodes Incorporated Electrical Characteristics NEW PRODUCT Characteristic @TA = 25C unless otherwise specified Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (per element) (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (per element) (Note 5) Gate Threshold Voltage VGS(th) 0.53 40 0.9 0.85 1.2 2.4 2.5 0.9 1.5 1.7 1.7 3.5 3.5 V VDS = VGS, ID = 100A VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA VDS = 3V, ID = 10mA BVDSS IDSS IGSS 20 10 5 V A A VGS = 0V, ID = 100A VDS = 17V, VGS = 0V VGS = 8V, VDS = 0V Static Drain-Source On-Resistance RDS (ON) Forward Transfer Admittance Yfs mS Notes: 5. Short duration test pulse used to minimize self-heating effect. 2 1.8 1.6 Ta = 25 C o VGS = 2.0V ID, DRAIN CURRENT (A) TA = 150C 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 VGS =1.8V TA = 125C VGS = 1.6V TA = 85C TA = 25C VGS = 1.4V TA = 0C VGS = 1.2V TA = -55 C VGS = 1.0V 2 3 4 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage TA = 150 C T A = 125C TA = 85 C TA = -55 C TA = 0 C TA = 25 C TA, AMBIENT TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Ambient Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current DS30801 Rev. 6 - 2 2 of 4 www.diodes.com DMN2005DLP4K (c) Diodes Incorporated NEW PRODUCT ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current TA = 150 C TA = 85C T A = 25C TA = -55 C TA, AMBIENT TEMPERATURE (C) Fig. 7 Static Drain-Source, On-Resistance vs. Ambient Temperature VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage f=1MHz Ciss |YfS|, FORWARD TRANSFER ADMITTANCE (S) CT, CAPACITANCE (pF) Coss Crss ID, DRAIN CURRENT (A) Fig. 9 Forward Transfer Admittance vs. Drain Current DS30801 Rev. 6 - 2 3 of 4 www.diodes.com DMN2005DLP4K (c) Diodes Incorporated Ordering Information (Note 6) NEW PRODUCT Device DMN2005DLP4K-7 Notes: Packaging DFN1310H4-6 Shipping 3000/Tape & Reel For packaging details, please go to our website at http://www.diodes.com/ap02007.pdf. Marking Information DL DL = Product Type Marking Code IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30801 Rev. 6 - 2 4 of 4 www.diodes.com DMN2005DLP4K (c) Diodes Incorporated |
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